PhD project on modelling defects at SiC/insulator interfaces


Closing date: 31 May 2021

The Department of Physics and Astronomy, UCL and Infineon Technology, Austria (IFAT) are seeking applications from enthusiastic PhD candidates interested in carrying out fundamental research using quantum mechanical methods in direct collaboration with an industrial partner. This 3.5 years PhD project in the group of Prof. Alexander Shluger at the Department of Physics and Astronomy, University College London in collaboration with IFAT will focus on  modeling the effects of defects at SiC/insulator interfaces on the performance of power field-effect-transistors (FETs) for future green technologies.

The power consumption and reliability of FETs based on SiC strongly depend on the defects present in SiC, in the insulator and at the metal-semiconductor interface. Defects in SiC are also considered as prospective candidates for quantum computation. This PhD project will use computational modelling to predict ways of improving materials and deposition techniques for SiC growth processes to minimize defect influences and improve the power consumption and performance of SiC-based devices. This will include using the existing and developing novel methods for modelling the structure and properties SiC/insulator/metal interfaces based on atomistic modelling and Density Functional Theory.

Highly motivated candidates from Physics, Chemistry or Materials Science Departments are strongly encouraged to apply for this post. Please note that, due to funding restrictions, only students eligible for home fees can receive this studentship. The PhD training and research will be carried out within the M3S Engineering Doctorate Centre at UCL and the London Thomas Young Centre.

The closing date for applications is 31st May, 2021. Evaluation of applications will commence immediately, and will continue until the position is filled. Applications and inquiries regarding the vacancy should be made to


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